Wrocław Research Center EIT+ professor elected to the Academia Europaea
Professor Detlef Hommel from Wrocław Research Center EIT+, has become an elected member of the Academia Europaea.
More information can be found here (in Polish).
Detlef Hommel:
Scientific degrees and titles:
1975 MSc – Physics Dept. University of Warsaw
1979 PhD – Physics Dept. University of Warsaw
1989 Habilitation (Dr. sc. nat.) – Humboldt-University Berlin
1991 Dr. habil. rer. nat. – University Leipzig
1993 Privatdozent – University Würzburg
1994 University Professor (C4) – University of Bremen
Scientific field of interest:
Condensed matter physics, mainly semiconductors and optoelectronic devices: spectroscopy of Rare Earth ions in wide gap materials; thin film electroluminescence; modern technologies especially for semiconductor epitaxy (molecular beam epitaxy MBE and metal organic vapour phase epitaxy MOVPE) and processing (focused ion beam, photo- and e-beam-lithography, various deposition methods); nanoscience (quantum dots, micropillars and nanorods); structural, electrical and optical characterization of heterostructures; optoelectronic devices (laser diodes, surface emitters, single photon sources, sensors); basic properties of wide bandgap semiconductors (group-III nitrides, II-VI selenides and tellurides).
Scientific output and science guidance experiences:
- 500+ original publications in internationally cited journals, among them Nature and Nature Physics, 6 Phys. Rev. Letters, 43 Phys. Rev. B, 3 Electronic Letters, 46 Appl. Phys. Letters, 21 J. Appl. Phys.;
- Hirsch index 32;
- 30+ invited talks at major international condensed matter conferences;
- 17 PhD and 35+ MSc theses supervisor; out of the group one female professor at University of Aachen;
- evaluator of physics theses in Tampere and Helsinki and in Warsaw;
- 10 patents on semiconductor devices
Major internationally recognized achievements:
1993 Green ZnSe laser diode (LD)
1998 Homoepitaxial ZnSe LD on ZnSe substrate in cw-operation
1999 Distributed Feedback (DFB) laser (II-VI) in the green spectral region
2000 Laser diode emitting at 560 nm (yellow-green) first worldwide
2001 Quantum dot LD with CdSe/ZnSSe *
2002 First European university realizing a violet nitride-based laser diode
2004 Homoepitaxial laser diode emitting at 400 nm on a GaN-HVPE substrate
2005 cw-operation of a GaN laser diode as first university worldwide
2008 Self organized, mask-free GaN nanorods on r-plane sapphire